3D thermal modeling of a plasma assisted chemical vapor deposition process

S Rouquette; L Autrique; C Chaussavoine; L Thomas

doi:10.1109/ACC.2002.1024442

Retour

3D thermal modeling of a plasma assisted chemical vapor deposition process

Acte de colloque

Open Access

3D thermal modeling of a plasma assisted chemical vapor deposition process

S Rouquette, L Autrique, C Chaussavoine et L Thomas

2002 American Control Conference (Anchorage, United States, 08/05/2002–10/05/2002)

DOI: https://doi.org/10.1109/ACC.2002.1024442

Résumé

Chemical Process Partial differential equation Sensitivity analysis Parameter estimation

Chemical Process

Partial differential equation

Sensitivity analysis

Parameter estimation

Due to unique properties such as hardness, or a low friction coefficient, amorphous silicon carbide films are attractive for mechanical applications. Even if Plasma Assisted Chemical Vapor Deposition processes are now commonly used for the growth of such coatings, mechanisms leading to their formations are not completely understood. However, the substrate temperature is considered as one of the key-parameters for this technique. Then in order to provide an effective predictive simulation tool or to determine optimal control procedures, a 3D thermal modeling of the Plasma Assisted Chemical Vapor Deposition process has to be investigated.

Fichiers et liens (1)

url

Find in HALAfficher

Indicateurs

1 Consultations de la notice

Détails

Titre: 3D thermal modeling of a plasma assisted chemical vapor deposition process
Créateurs - sans rôle: S Rouquette - Université de Montpellier, Laboratoire de Mécanique et Génie Civil - LMGC
L Autrique - Université d'Angers
C Chaussavoine - Université de Perpignan
L Thomas - Université de Perpignan
Colloque: 2002 American Control Conference (Anchorage, United States, 08/05/2002–10/05/2002)
Identifiants: 9942418309311
Unité académique: Laboratoire de Mécanique et Génie Civil - LMGC
Langue: English
Type de ressource: Conference proceeding
Champs locaux: hal-04539469