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13.2 nm Table-Top Inspection Microscope for Extreme Ultraviolet Lithography Mask Defect Characterization
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13.2 nm Table-Top Inspection Microscope for Extreme Ultraviolet Lithography Mask Defect Characterization

Fernando Brizuela, Yong Wang, Courtney A. Brewer, Francesco Pedaci, Weilun Chao, Erik H. Anderson, Yanwei Liu, Kenneth A. Goldberg, Patrick Naulleau, Przemyslaw Wachulak, …
2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5, p.2458
01/01/2009

Résumé

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Physics Physics, Applied Science & Technology Technology
We report on a reflection microscope that operates at 13.2-nm wavelength with a spatial resolution of 55 +/- 3 nm. The microscope uses a table-top EUV laser to acquire images of photolithography masks in 20 seconds. (C) 2009 Optical Society of America

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