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0.69 THz room temperature heterodyne detection using GaN nanodiodes
Acte de colloque   Open Access

0.69 THz room temperature heterodyne detection using GaN nanodiodes

Carlos Daher, Jeremie Torres, Ignacio Iñiguez-De-La-Torre, Philippe Nouvel, Luca Varani, Paul Sangaré, Guillaume Ducournau, Christophe Gaquière, Javier Mateos et And Tomás González
19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
Proc. of 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (Salamanca, Spain, 2015)
2015

Résumé

GaN-based asymmetric nanodiodes have been used as heterodyne detectors up to 0.69 THz in free-space configuration where Intermediate Frequency bandwidth has been measured up 13 GHz. Monte Carlo simulations, used to estimate nano-device intrinsic conversion losses of 27 dB have confirmed these results.

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