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Type-II Interband cascade lasers grown on (100) GaAs substrates
Conference poster   Open access

Type-II Interband cascade lasers grown on (100) GaAs substrates

Maeva Fagot, Daniel Andres Diaz Thomas, Michel Ramonda, Gad Kombila, Jean-Baptiste Rodriguez, Eric Tournié and Laurent Cerutti
21st European Workshop on Molecular Beam Epitaxy (EuroMBE 2023) (Madrid, Spain, 16/04/2023–19/04/2023)
2023

Abstract

Interband cascade laser Mid Infrared Antimonides GaAs substrate
We have grown Sb-based type-II interband cascade lasers on GaAs substrates. Despite a high density of threading dislocations in the range of 10 8 cm-2 , a threshold current density of 150 A/cm² and continuous wave operation up to 50°C have been obtained. These performances similar to those obtained on GaSb demonstrate the high tolerance to dislocations of type-II ICL.
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