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Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.
Conference poster   Open access

Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.

F Fedichkin, P Andreakou, P Valvin, M Vladimirova, T Guillet, T Bretagnon, A Dussaigne, N Grandjean and Pierre Lefebvre
Compound Semiconductor Week 2014 (Montpellier, France, 11/05/2014–15/05/2014)

Abstract

We present spatially- and time-resolved photoluminescence experiments on polar GaN/AlGaN quantum well structures,showing exciton propagation distance of tens of micrometers from generation position and exciton radiative lifetimes oftens of microseconds. We study in detail the dynamics and range of their relaxation/diffusion along the growth plane, asa function of temperature.
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