Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range.

Conference poster

Pierre Lefebvre, Christelle Brimont, Pierre Valvin, H. Miyake, K. Hiramatsu and Bernard Gil

International Workshop on Nitride semiconductors (IWN 2012). (Sapporo, Japan, 14/10/2012–19/10/2012)

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Title: Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range.
Creators - without role: Pierre Lefebvre - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Christelle Brimont - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Pierre Valvin - Université de Montpellier, Laboratoire Charles Coulomb - L2C
H. Miyake - Optoelectronics Lab
K. Hiramatsu
Bernard Gil - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Conference: International Workshop on Nitride semiconductors (IWN 2012). (Sapporo, Japan, 14/10/2012–19/10/2012)
Identifiers: 9995156909311
Academic Unit: Laboratoire Charles Coulomb - L2C
Language: English
Resource Type: Conference poster
Local Fields: hal-00797472