Abstract
An important building block for many cryptographic systems is a random number generator (RNG). However, RNGs are categorized into two distinct groups: pseudo random number generators (PRNGs) and truly random generators (TRNGs). This work experimentally demon- strates a TRNG based on Thermally Assisted Switch- ing Magnetic Random Access Memory (TAS-MRAM). The heating voltage when writing TAS-MRAM is used to pro- vide the stochastic switching behavior as a source of ran- domness. XOR post processing are used to performed a good random numbers which passed the statistical test of NIST SP-800 with the appropriate pass rate.