THZ coherent source based on light structuration using III-V semiconductor laser technology

THz photonics-based sources are attractive as they offer room-temperature solutions that rely on mature photonics technology and provide broadband tunability and large modulation bandwidth to address specific THz applications such as high-data-rate communications or spectroscopy. In this work we present a laser source based on GaAs semiconductor technology for THz applications. We have developed a continuous wave optically-pumped Vertical-External-Cavity Surface-Emitting Laser (VECSEL). It is possible to have a THz emission thanks to beating of two different Laguerre-Gauss (LG) transversal modes using a photoconductive antennas (PCA) as a photomixer, so it is necessary to select only two modes where the frequencies difference is in THz regime. We demonstrate THz emission using plasmonic-electrodes PCA optically-pumped at 1064 nm.