Spectroscopy of GaN nanocolumns grown by molecular beam epitaxy on Si.

Conference poster

Pierre Corfdir, Jean-Daniel Ganière, J. Ristic, Pierre Lefebvre, B. Deveaud and E. Calleja

Meeting annuel de la Société Suisse de Physique. (Genève, Switzerland, 26/03/2008–28/03/2008)

Abstract

We present time-resolved PL spectroscopy of GaN nanocolumns grown by MBE on Si substrates.

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Title: Spectroscopy of GaN nanocolumns grown by molecular beam epitaxy on Si.
Creators - without role: Pierre Corfdir - Institute of Condensed Matter Physics [Lausanne]
Jean-Daniel Ganière - Institute of Condensed Matter Physics [Lausanne]
J. Ristic - Institut de Photonique et d'Electronique Quantiques
Pierre Lefebvre - Université de Montpellier, Laboratoire Charles Coulomb - L2C
B. Deveaud - Laboratoire d'Optoélectronique Quantique
E. Calleja - Instituto de Sistemas Optoelectrónicos y Microtecnología
Conference: Meeting annuel de la Société Suisse de Physique. (Genève, Switzerland, 26/03/2008–28/03/2008)
Identifiers: 9995156709311
Academic Unit: Laboratoire Charles Coulomb - L2C
Language: English
Resource Type: Conference poster
Local Fields: hal-00797191