- Title
- Radiative recombination limited lifetimes in non-polar (Al,Ga)N/GaN quantum wells grown on bulk GaN crystals.
- Creators - without role
- Pierre Corfdir - Institute of Condensed Matter Physics [Lausanne]Amélie Dussaigne - Institute of Condensed Matter Physics [Lausanne]H. Teisseyre - Institute of High Pressure PhysicsIzabella Grzegory - Institute of High Pressure PhysicsTadeusz Suski - Institute of High Pressure PhysicsPierre Lefebvre - Université de Montpellier, Laboratoire Charles Coulomb - L2CJean-Daniel Ganière - Institute of Condensed Matter Physics [Lausanne]N. Grandjean - Institute of Condensed Matter Physics [Lausanne]Benoit Deveaud-Plédran - Institute of Condensed Matter Physics [Lausanne]
- Conference
- 38th International Symposium on Compound Semiconductors - ISCS38. (Berlin, Germany, 22/05/2011–26/05/2011)
- Identifiers
- 9980650809311
- Academic Unit
- Laboratoire Charles Coulomb - L2C
- Language
- English
- Resource Type
- Conference poster
- Local Fields
- hal-00632230
Conference poster
Radiative recombination limited lifetimes in non-polar (Al,Ga)N/GaN quantum wells grown on bulk GaN crystals.
38th International Symposium on Compound Semiconductors - ISCS38. (Berlin, Germany, 22/05/2011–26/05/2011)
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