- Title
- Radiative Recombination Limited Lifetimes in a-plane (Al,Ga)N/GaN single quantum wells grown on GaN.
- Creators - without role
- Pierre Corfdir - Institute of Condensed Matter Physics [Lausanne]Amélie Dussaigne - Institute of Condensed Matter Physics [Lausanne]Pierre Lefebvre - Instituto de Sistemas Optoelectrónicos y MicrotecnologíaH. Teisseyre - Institute of High Pressure PhysicsTadeusz Suski - Institute of High Pressure PhysicsIzabella Grzegory - Institute of High Pressure PhysicsJean-Daniel Ganière - Institute of Condensed Matter Physics [Lausanne]N. Grandjean - Institute of Condensed Matter Physics [Lausanne]Benoit Deveaud-Plédran - Institute of Condensed Matter Physics [Lausanne]
- Conference
- International Workshop on Nitride Semiconductors - IWN 2010 (Tampa, Floride., United States, 19/09/2010–24/09/2010)
- Identifiers
- 9939635509311
- Academic Unit
- Université de Montpellier
- Language
- English
- Resource Type
- Conference poster
- Local Fields
- hal-00633505
Conference poster
Radiative Recombination Limited Lifetimes in a-plane (Al,Ga)N/GaN single quantum wells grown on GaN.
International Workshop on Nitride Semiconductors - IWN 2010 (Tampa, Floride., United States, 19/09/2010–24/09/2010)
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