Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy

Conference poster

Julien Brault, Mathieu Leroux, Samuel Matta, Mohamed Al Khalfioui, Benjamin Damilano, Herve Peyre, Sylvie Contreras, Sandrine Juillaguet and Bernard Gil

International Workshop on Nitride Semiconductor (Kanazawa, Japan, 11/11/2018)

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Title: Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy
Creators - without role: Julien Brault - SES
Mathieu Leroux - SES
Samuel Matta - SES
Mohamed Al Khalfioui - SES
Benjamin Damilano - SES
Herve Peyre - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Sylvie Contreras - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Sandrine Juillaguet - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Bernard Gil - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Conference: International Workshop on Nitride Semiconductor (Kanazawa, Japan, 11/11/2018)
Identifiers: 9980212209311
Academic Unit: Laboratoire Charles Coulomb - L2C
Language: English
Resource Type: Conference poster
Local Fields: hal-01937537