Abstract
The rise of efficient extraction techniques triggered a renewal of interest in semiconducting carbon nanotubes (s-SWNT) research. It represents a great interest for optoelectronics, with outstanding properties in field-effect transistor, and s-SWNT ability to efficiently emit light in the near-IR range. In particular, polyfluorene (PFO) wrapped s‑SWNT (s-SWNT@PFO) display strong photoluminescence, and could be coupled with photonic devices such as microring resonators [1,2] to control photoluminescence linewidth and enhance photoluminescence intensity. The main challenge for using s-SWNT@PFO in optoelectronics lies in the difficulty to establish good electrical contact with a PFO embedded carbon nanotube. We propose to investigate these issues by tuning the amount of PFO wrapping around s-SWNT. A low pressure annealing process is used to selectively remove PFO around s‑SWNT without burning nanotubes themselves (Figure). The resulting s-SWNT@PFO networks are then probed by AFM, Raman spectroscopy, absorption, photoluminescence and electrical experiments.