Optical properties of V-pits in GaN through temperature-dependent picosecond Time-Resolved Cathodolminescence (pTRCL)

Conference poster

Samuel Sonderegger, Pierre Corfdir, Laurent Balet, Pierre Lefebvre, Denis Martin, N. Grandjean, Jean-Daniel Ganière and Benoit Deveaud-Plédran

Int. Conf. on Nitride Semiconductors - ICNS8. (Jeju, South Korea, 18/10/2009–23/10/2009)

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Title: Optical properties of V-pits in GaN through temperature-dependent picosecond Time-Resolved Cathodolminescence (pTRCL)
Creators - without role: Samuel Sonderegger - Institute of Condensed Matter Physics [Lausanne]
Pierre Corfdir - Institute of Condensed Matter Physics [Lausanne]
Laurent Balet - Institute of Condensed Matter Physics [Lausanne]
Pierre Lefebvre - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Denis Martin - Institute of Condensed Matter Physics [Lausanne]
N. Grandjean - Institute of Condensed Matter Physics [Lausanne]
Jean-Daniel Ganière - Institute of Condensed Matter Physics [Lausanne]
Benoit Deveaud-Plédran - Institute of Condensed Matter Physics [Lausanne]
Conference: Int. Conf. on Nitride Semiconductors - ICNS8. (Jeju, South Korea, 18/10/2009–23/10/2009)
Identifiers: 9995042709311
Academic Unit: Laboratoire Charles Coulomb - L2C
Language: English
Resource Type: Conference poster
Local Fields: hal-00797196