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Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation
Poster de colloque

Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation

Cédric Robert Robert, Charles Cornet, K. Pereira da Silva, Pascal Turban, S. Mauger, Thanh Tra Nguyen, Jacky Even, Jean-Marc Jancu, Mathieu Perrin, Hervé Folliot, …
International Conference on Indium Phosphide and Related Materials (IPRM), 2013, pp.1-2
International Conference on Indium Phosphide and Related Materials (IPRM), 2013
25th International Conference on Indium Phosphide and Related Materials (IPRM2013) (Kobe, Japan, 19/05/2013–23/05/2013)
2013
DOI: https://doi.org/10.1109/ICIPRM.2013.6562587

Résumé

The structural properties of (In,Ga)As/GaP quantum dots (QDs) are studied by plane view and cross scanning tunneling microscopy. Time-resolved and pressure dependent photoluminescence experiments show a ground optical transition of indirect type. Mixed k.p/tight-binding simulations indicate a possible indirect to direct crossover depending on indium content and QD size. The incorporation of nitrogen in QDs is finally shown.

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