Abstract
We measured the 4-probe conductance of more than 10 MoS 2 -based field effect transistors after in-situ annealing at 600K. Temperature dependent insulating and metallic behaviours have been observed as a function of carrier density. We do a careful analysis of thermally activated transport and variable range hopping of in-gap states, extracting the correct carrier density and mobility for the band conduction which compares well with theoretical expectations.