Résumé
The Si/SiGe:C HBTs are one of the best candidates that provides high frequency range integrated circuits. In order to increase ft and fmax, the device dimensions are reduced which has an impact on the low frequency noise level. The 55 nm BiCMOS technology HBTs are developed with three collector doping level for High Speed, Medium Voltage and High Voltage applications. This work presents the LFN characterization and the 1/f noise modeling using the SPICE model for the three HS, MV and HV HBTs. The parameters of the SPICE model are extracted allowing to detect the defected area of the HBTs.