- Titre
- Localization effects in InGaN/GaN wide quantum well structures grown on bulk GaN crystals.
- Créateurs - sans rôle
- Robert Czernecki - Institute of High Pressure PhysicsPiotr Perlin - Institute of High Pressure PhysicsG. Franssen - Institute of High Pressure PhysicsT. Swietlik - Institute of High Pressure PhysicsJ. Borysiuk - Institute of High Pressure PhysicsS. Grzanka - Institute of High Pressure PhysicsPierre Lefebvre - Groupe d'étude des semiconducteursMichal Leszczynski - Institute of High Pressure PhysicsIzabella Grzegory - Institute of High Pressure PhysicsSylvester Porowski - Institute of High Pressure PhysicsTadeusz Suski - Institute of High Pressure Physics
- Colloque
- 6th International Conference on Nitride Semiconductors (ICNS6). (Brème, Germany, 28/08/2006–02/09/2006)
- Identifiants
- 99150562809311
- Unité académique
- Université de Montpellier
- Langue
- English
- Type de ressource
- Conference poster
- Champs locaux
- hal-01309942
Poster de colloque
Localization effects in InGaN/GaN wide quantum well structures grown on bulk GaN crystals.
6th International Conference on Nitride Semiconductors (ICNS6). (Brème, Germany, 28/08/2006–02/09/2006)
Indicateurs
1 Consultations de la notice