Résumé
In this work, simulation results based on the free finite-element modeling software FreeFem++ are presented. They allow to precisely account for the behavior of real devices in the presence of a magnetic field. The equations used, their variational form and the finite-element methodology using FreeFem is detailed. Preliminary results, applicable to any isotropic 2D material with one type of carrier, allow to take into account the influence of : electrostatic doping, sample geometry, metallic contacts, and geometrical defects. The prospects of this work is to implement a two-carrier model accounting for the effect of thermal activation and of realistic spatial disorder in graphene in an open, free access simulation tool.