Abstract
Graphene, known as one carbon layer material, holds attractive properties due to its hexagonal lattice, also called honeycomb structure. Since the seminal work on mechanically exfoliated few layer graphene, more growth processes were explored: Chemical Vapor Deposition (CVD) on metals or on silicon carbide (SiC); chemical reduction of graphene oxides and SiC sublimation. In contrast to the other graphene growth techniques, thermal decomposition of SiC provides wafer-scale homogeneous graphene spontaneously forming on semi-insulating substrate. SiC sublimation is the most promising option to achieve the transfer free and wafer-scale graphene. Furthermore, graphene/SiC is compatible with lithography techniques for further applications; thereby epitaxial graphene on SiC is a potential candidate for nanoelectronics. Until now, monolayer graphene growth by SiC sublimation at a pressure closed to the atmospheric pressure (around 900 mbar) and at high temperature (>1650°C) is well known . However, to obtain films with different and controlled characteristics such as the number of graphene layers or the type of doping by controlling the growth parameters remains challenging. We will present the initial growth stages from buffer layer to monolayer graphene on SiC (0001) as a function of the temperature at low pressure (10 mbar). A reproducible synthesis of low p-type doped monolayer graphene was optimized (few 10^11 cm-2). The p-type doping are obtained here on the bare samples without any post-growth process such as lithography. A prototypal HTA-100 furnace developed by Annealsys Company has allowed the synthesis of these original samples. All the samples were characterized by Raman spectroscopy and Atomic Force Microscopy (AFM). In addition, transport measurements (at room temperature and low temperature with high magnetic field) were carried out in the case of continuous monolayer graphene films showing especially characteristics of Quantum Hall Effect.