- Title
- Excitons in GaN/AlGaN homoepitaxial quantum wells grown along the nonpolar (02-11) direction on bulk GaN substrates.
- Creators - without role
- Henryk Teisseyre - Institute of High Pressure PhysicsC. Skierbiszewski - Institute of High Pressure PhysicsBoleslaw Łucznik - Institute of High Pressure PhysicsKamler G. - Institute of High Pressure PhysicsFeduniewicz A. - Institute of High Pressure PhysicsM Siekacz - Institute of High Pressure PhysicsPierre Valvin - Groupe d'étude des semiconducteursPierre Lefebvre - Groupe d'étude des semiconducteursTadeusz Suski - Institute of High Pressure PhysicsPiotr Perlin - Institute of High Pressure PhysicsIzabella Grzegory - Institute of High Pressure PhysicsSylvester Porowski - Institute of High Pressure Physics
- Conference
- 6th International Conference on Nitride Semiconductors (ICNS6). (Brème, Germany, 28/08/2006–02/09/2006)
- Identifiers
- 9940499709311
- Academic Unit
- Université de Montpellier
- Language
- English
- Resource Type
- Conference poster
- Local Fields
- hal-01309939
Conference poster
Excitons in GaN/AlGaN homoepitaxial quantum wells grown along the nonpolar (02-11) direction on bulk GaN substrates.
6th International Conference on Nitride Semiconductors (ICNS6). (Brème, Germany, 28/08/2006–02/09/2006)
Metrics
1 Record Views