Exciton relaxation and recombination mechanisms in a-plane GaN probed by time-resolved cathodoluminescence.

Pierre Corfdir; Pierre Lefebvre; Amélie Dussaigne; J. Ristic; T. Zhu; Denis Martin; N. Grandjean; Benoit Deveaud-Plédran; Jean-Daniel Ganière

Conference poster

Exciton relaxation and recombination mechanisms in a-plane GaN probed by time-resolved cathodoluminescence.

Pierre Corfdir, Pierre Lefebvre, Amélie Dussaigne, J. Ristic, T. Zhu, Denis Martin, N. Grandjean, Benoit Deveaud-Plédran and Jean-Daniel Ganière

10th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors - BIAMS 2010 (Halle (Saale), Germany, 04/07/2010–08/07/2010)

Abstract

Exciton relaxation and recombination mechanisms in a-plane GaN probed by time-resolved cathodoluminescence.

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Title: Exciton relaxation and recombination mechanisms in a-plane GaN probed by time-resolved cathodoluminescence.
Creators - without role: Pierre Corfdir - Institute of Condensed Matter Physics [Lausanne]
Pierre Lefebvre - Instituto de Sistemas Optoelectrónicos y Microtecnología
Amélie Dussaigne - Institute of Condensed Matter Physics [Lausanne]
J. Ristic - Instituto de Sistemas Optoelectrónicos y Microtecnología
T. Zhu - Institute of Condensed Matter Physics [Lausanne]
Denis Martin - Institute of Condensed Matter Physics [Lausanne]
N. Grandjean - Institute of Condensed Matter Physics [Lausanne]
Benoit Deveaud-Plédran - Institute of Condensed Matter Physics [Lausanne]
Jean-Daniel Ganière - Institute of Condensed Matter Physics [Lausanne]
Conference: 10th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors - BIAMS 2010 (Halle (Saale), Germany, 04/07/2010–08/07/2010)
Identifiers: 9942122409311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Conference poster
Local Fields: hal-00634162