Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN

Conference poster

Sylvie Contreras, Leszek Konczewicz, Sandrine Juillaguet, Herve Peyre, Mohamed Al Khalfioui, Samuel Matta, Mathieu Leroux, Benjamin Damilano, Bernard Gil and Julien Brault

International Workshop on Nitride Semiconductor (Kanazawa, Japan, 11/11/2018)

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Title: Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN
Creators - without role: Sylvie Contreras - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Leszek Konczewicz - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Sandrine Juillaguet - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Herve Peyre - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Mohamed Al Khalfioui - SES
Samuel Matta - SES
Mathieu Leroux - SES
Benjamin Damilano - SES
Bernard Gil - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Julien Brault - SES
Conference: International Workshop on Nitride Semiconductor (Kanazawa, Japan, 11/11/2018)
Identifiers: 9963777109311
Academic Unit: Laboratoire Charles Coulomb - L2C
Language: English
Resource Type: Conference poster
Local Fields: hal-01937531