Direct growth of gasb on Ge, Ge-On-Si and SIGE-On-Si platforms for integrated MID infra-red photonics

Milan Silvestre; Audrey Gilbert; Stefano Calcaterra; Giovanni Isella; Jean-Baptiste Rodriguez; Eric Tournié

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Direct growth of gasb on Ge, Ge-On-Si and SIGE-On-Si platforms for integrated MID infra-red photonics

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Direct growth of gasb on Ge, Ge-On-Si and SIGE-On-Si platforms for integrated MID infra-red photonics

Milan Silvestre, Audrey Gilbert, Stefano Calcaterra, Giovanni Isella, Jean-Baptiste Rodriguez and Eric Tournié

Journées Nano, Micro et Optoélectronique (JNMO 2024) (Sète, France, 01/10/2024–04/10/2024)

Abstract

We study the growth of GaSb on germanium-based platforms for mid-infrared photonics. Anti-phase domain are buried in a 500 nm GaSb buffer layer on Ge and Ge- on-Si templates thanks to slightly miscut substrates or chemicaly-mechanicaly polished surfaces.

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Title: Direct growth of gasb on Ge, Ge-On-Si and SIGE-On-Si platforms for integrated MID infra-red photonics
Creators - without role: Milan Silvestre - Institut d'Électronique et des Systèmes
Audrey Gilbert - Institut d'Électronique et des Systèmes
Stefano Calcaterra - Politecn Milan, LNESS Dipartimento Fis, I-22100 Como, Italy
Giovanni Isella - Politecn Milan, LNESS Dipartimento Fis, I-22100 Como, Italy
Jean-Baptiste Rodriguez - Institut d'Électronique et des Systèmes
Eric Tournié - Institut Universitaire de France
Conference: Journées Nano, Micro et Optoélectronique (JNMO 2024) (Sète, France, 01/10/2024–04/10/2024)
Identifiers: 9942059209311
Academic Unit: Institut d'Electronique et des Systèmes - IES
Language: English
Resource Type: Conference poster
Local Fields: hal-04738104