- Title
- Theory of Ballistic Electron Transport in n+-i-n+ Diodes : Propertie in THz Frequency Range
- Creators - without role
- V. Korotyeyev - Institute of Semiconductor PhysicsV. Kochelap - Institute of Semiconductor PhysicsG. Sabatini - Université de Montpellier, Institut d'Electronique et des Systèmes - IESH. Marinchio - Université de Montpellier, Institut d'Electronique et des Systèmes - IESC. Palermo - Université de Montpellier, Institut d'Electronique et des Systèmes - IESL. Varani - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
- Contributors - without role
- W. A. GoddardD. W. BrennerS. E. LyshevskiG. J. Iafrate
- Publication Details
- Handbook of Nanoscience, Engineering, and Technology, pp.239-275
- Series
- Handbook of Nanoscience, Engineering, and Technology
- Identifiers
- 9942808309311
- Academic Unit
- Institut d'Electronique et des Systèmes - IES
- Language
- English
- Resource Type
- Book chapter
- Local Fields
- hal-02444279
Book chapter
Theory of Ballistic Electron Transport in n+-i-n+ Diodes : Propertie in THz Frequency Range
Handbook of Nanoscience, Engineering, and Technology, pp.239-275
Handbook of Nanoscience, Engineering, and Technology
2012
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