Résumé
By varying the final heating temperature in the range 1050°C ‐ 1300°C, cubic silicon carbide (β‐SiC) and/or trigonal silicon nitride (α‐Si
3
N
4
) nanowires (NWs) were prepared by direct thermal treatment under nitrogen, of commercial silicon powder and graphite. Long and highly curved β‐SiC NWs were preferentially grown below 1200°C, while straight and short a‐Si3N4 NWs were formed above 1300°C. Between these two temperatures, a mixture of both nanowires was obtained. The structure and chemical composition of these nanostructures have been investigated by SEM, HRTEM.EDX and EELS.