Résumé
We report on spontaneous and stimulated emission from strained InAs quantum wells (QWs) embedded in an AlxGa0.48–xIn0.52As matrix grown on InP substrates by solid-source molecular-beam epitaxy. By adjusting the QW width between 2 and 23 monolayers and/or the barrier composition between Al0.48In0.52As and Ga0.47In0.53As, the low temperature photoluminescence can be tuned between 1.0 μm and 2.2 μm. Efficient room temperature luminescence is achieved up to 2.4 μm which is the longest wavelength reported for QWs grown on InP substrates. Finally, we demonstrate the first stimulated emission near 1.3 μm and 1.8 μm at 80 K in this materials system. These results thus enlarge the wavelength range of applications achievable with InP-based materials.