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Noise optimisation of a piezoresistive CMOS MEMS for magnetic field sensing
Book chapter   Open access

Noise optimisation of a piezoresistive CMOS MEMS for magnetic field sensing

Vincent Beroulle, Yves Bertrand, Laurent Latorre and Pascal Nouet
SOC Design Methodologies, Vol.90, pp.461-472
IFIP — The International Federation for Information Processing
2002

Abstract

CMOS MEMS magnetic sensor noise
Using 100% industrial fabrication processes, the design and the fabrication of a monolithic CMOS MEMS magnetic field sensor, targeting noise reduction, are developed in this paper. The sensor is based on a resonant cantilever structure with optimized electronics for signal treatment and noise filtering in order to achieve competitive performances. With a final sensitivity of 350Vrms/T and a 2μT resolution, the system is able to measure earth natural magnetic field.
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https://doi.org/10.1007/978-0-387-35597-9_39View
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