Résumé
The 1/f noise of double self-aligned InP/InGaAs bipolar transistors is studied. Devices are different in geometry and crystallographic orientation. A correlation between base and collector current noise sources ib and ic is assumed. An analysis of the current spectral densities associated with ib and ic vs bias and geometry is undertaken. The spectral densities associated of the correlated and uncorrected part of ic are also investigated. The differences in behaviour observed from one type of device to another shows the importance of technological parameters such as mesa undercuts or shape of the emitter.