Résumé
Solid-state devices with S-type negative differential conductance (NDC) have a wide application in microelectronics as fast switchers and microwave power generators. Recently, significant attention has been devoted to the heterostructure hot-electron diode (HHED)1 where S-type NDC and high-frequency oscillations up to 100 GHz have been obtained1–4. To improve the high-frequency performance of the HHED we propose here to replace the anode n+ contact with a p+ layer thus introducing the possibility for an additional hole current and a second switching of the device to a higher conductance state.