Absolute negative resistance in ballistic variable threshold field effect transistors

Book chapter

Michel Dyakonov and Michael Shur

Future trends in microelectronics, pp.296-303

2007

Abstract

negative resistance

ballistic variable threshold effect transistor

Bernaulli's law

gate-to-channel capacitance

electron concentration

ISBN: 978-0-470-08146-4

This chapter contains sections titled: * Acknowledgments * References

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Title: Absolute negative resistance in ballistic variable threshold field effect transistors
Creators - without role: Michel Dyakonov - Laboratoire de Physique Théorique
Michael Shur
Contributors - without role: S. Luryi
J. Xu
and A. Zaslavsky
Publication Details: Future trends in microelectronics, pp.296-303
Identifiers: 9938650709311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Book chapter
Local Fields: hal-00264791