Logo image
Se connecter
Retour
A superlattice infrared photodetector operating at room temperature in the 3-5 μm wavelength domain
Chapitre d'ouvrage

A superlattice infrared photodetector operating at room temperature in the 3-5 μm wavelength domain

J.B. Rodriguez, P. Christol, F. Chevrier, J. Nieto et A. Joullie
Narrow Gap Semiconductors, pp.413-418
CRC Press, 1
2006
DOI: https://doi.org/10.1201/9781482269215-68

Résumé

Van Der Pauw Method Residual Carrier Concentration Band Offsets GaSb Substrate Cutoff Wavelength Shubnikov De Haas Oscillations Solid Source Molecular Beam Epitaxy Average Tensile Strain Mesa Devices THz QCL Ammonium Sulphide Ion Beam Milling Semi-insulating GaAs Substrates Wet Etching Techniques Narrow Gap Semiconductors Magnetotransport Measurements External Quantum Efficiencies CW Effective Band Gap FTIR Spectrometer Thermoionic Emission QCL Carrier Concentration Reverse Bias
Uncooled midwavelength p-i-n infrared photodetectors based on InAs/GaSb superlattice are reported. The active region consists of 250 periods of InAs(lOMLs)/InSb(lML)/GaSb(lOMLs) perfectly lattice-matched to the GaSb substrate. Mesa devices with a cut-off wavelength of 6 μm exhibit at a 4 μm wavelength high absorption coefficient of ∼3000 cm−1. For a reverse bias voltage of 0.4V they have a current density of 20A/cm2 and a photoresponse of 300 mW/A.

Indicateurs

1 Consultations de la notice

Détails

Logo image